Vapor deposition mask and organic el display device

ABSTRACT

The purpose is providing a vapor deposition mask with high rigidity which can evaporate a uniform thickness film. A vapor deposition mask including a mask body having a main opening, a side surface of the main opening, an upper surface intersecting the side surface, and a lower surface opposing the upper surface, a first insulator contacting the lower surface, and a second insulator contacting the upper and side surfaces, wherein the first insulator includes a first region inside the main opening, and a first opening in the first region, the second insulator includes a second region inside the main opening, and a second opening in the second region, the mask body is sandwiched between the first and second insulators, and one of the first and second insulators includes a region located inside the main opening more centrally than the other and not overlapping with the other and the mask body.

TECHNICAL FIELD

The present invention relates to a vapor deposition mask for forming apattern formed by a thin film above a substrate. In particular, thepresent invention relates to a vapor deposition mask for depositing anorganic material used in a light emitting element such as anelectroluminescence element, and an organic EL display device formedusing the same.

BACKGROUND

Organic electroluminescence (hereinafter also referred to as “EL”)elements are known as light emitting elements which utilize anelectroluminescence (EL) phenomenon. An organic EL element can emitlight at colors of various wavelengths by selecting organic materialswhich form functional layers such as a light emitting layer, an electroninjection layer and a hole injection layer, and applications for displaydevices and lighting equipment is progressing.

Both a low molecular organic material or high molecular organic materialcan be used as an organic material forming the functional layersdescribed above. In particular, since a low molecular organic materialhas excellent thermal stability and is easy to handle, practical use asan organic material forming a functional layer of an organic EL deviceis already progressing.

Currently, vapor deposition of a deposition mask is mainly used as amethod of forming an organic material forming each functional layer inan organic EL display device. A vapor deposition mask is a mask(shielding plate) formed by a metal foil (metal sheet) in which aplurality of fine slits or holes (hereinafter referred to as “openingparts”) are arranged at minute intervals, and is called a metal mask.For example, in the case of manufacturing an active matrix type organicEL display device, a vapor deposition mask in which a plurality ofopening parts are arranged corresponding to the arrangement of aplurality of pixels (that is, regions where an organic material isformed) is used.

Normally, a vapor mask is fixed by welding or laser welding in a statewhere tension is applied to a strong rectangular frame. In addition, atthe time of vapor deposition, a method of placing a vapor depositionmask on a substrate which is the object of vapor deposition in a statefixed to a frame and fixing and holding the vapor deposition mask from arear surface of the substrate using a magnet or the like is generallyadopted.

However, since the rigidity of a vapor deposition mask is extremelysmall, slight distortions may occur when the mask is held on thesubstrate surface, which may become a problem particularly in themanufacture of a high definition organic EL display device. In addition,the generation of metal foreign objects due to the contact between avapor deposition mask formed by metal foil and the substrate surface hasbeen regarded as a problem.

In view of the problem of rigidity described above, a method is proposedin Patent Document 1 and Patent Document 2 in which a resin such aspolyimide is coated on a metal member forming a vapor deposition mask toform smaller opening parts in the resin located in the opening parts ofthe metal member. The effect of increasing rigidity by reinforcing avapor deposition mask with resin was aimed for.

PRIOR ART Patent Document

-   Patent Document 1: Japanese Unexamined Patent Publication No.    2013-209710-   Patent Document 2: Japanese Unexamined Patent Publication No.    2013-245392

SUMMARY OF THE INVENTION Problem to be Solved by the Invention

However, in the vapor deposition masks described in Patent Document 1and Patent Document 2, since a cross-sectional shape of an opening partarranged in a resin has a reverse taper or perpendicular shape, there isa problem by which an incident component from a diagonal direction ofthe vapor deposition material is blocked by an end part of the openingpart which affects a film thickness distribution of an organic material.

FIG. 19 is a diagram showing a vapor deposition method using aconventional deposition mask described in Patent Document 1 and PatentDocument 2. In FIG. 19(A), 1901 is a substrate to be processed, 1902 isa resin layer and 1903 is a mask body formed by a conductor such as amagnetic metal. As is shown in FIG. 19(A), an organic material which isa vapor deposition material enters from above the mask body 1903.Actually, the organic material enters from various directions includinga diagonal direction.

FIG. 19(B) is a diagram showing a film thickness distribution in thecase where an opening part 1904 arranged in the resin layer 1902 isviewed from a direction perpendicular to a surface of the substrate1901. At this time, since the organic material uniformly enters near thecenter of the opening part 1904, an organic film 1905 is formed with adesired film thickness. However, in the vicinity of an end part of theopening part 1904, an edge (edge) of the opening part becomes a shadow,variation occurs in the film thickness distribution and an organic film1906 having a thin film thickness is locally formed.

As described above, in the vapor deposition methods described in PatentDocument 1 and Patent Document 2, it was difficult to form an organicfilm having a uniform film thickness without being affected by theopening parts. In order to solve this problem, although reducing thefilm thickness of a resin layer is conceivable, a problem occurs inwhich the strength of the vapor deposition mask is insufficient. Inaddition, a problem in which generation of foreign objects due tocontact between the substrate to be processed described above and aconductor forming the vapor deposition mask could not be solved.

The present invention is a result of attempting to solve the problemsdescribed above and aims to provide a vapor deposition mask by whichvapor deposition at a uniform film thickness while maintaining highrigidity of the entire vapor deposition mask is possible.

In addition, another aim of the present invention is to provide a vapordeposition mask by which a reduction in the generation of foreignobjects in the case when the vapor deposition mask and a substrate to beprocessed are in contact with each other is possible.

Means for Solving the Problem

A vapor deposition mask in one aspect of the present invention includesa mask body having a main opening part, a side surface of the mainopening part, an upper surface intersecting with the side surface, and alower surface intersecting with the side surface and opposing the uppersurface; a first insulator contacting the lower surface, and a secondinsulator contacting the upper surface and the side surface, wherein thefirst insulator includes a first region located inside of the mainopening part, and a first opening part located in the first region, thesecond insulator includes a second region located inside of the mainopening part, and a second opening part located in the second region,the mask body is sandwiched between the first insulator and the secondinsulator, and one of the first insulator and the second insulatorincludes a region located inside of the main opening part more centrallythan an other and not overlapping with the other and the mask body.

A vapor deposition mask in one aspect of the present invention includesa mask body having a main opening part, a side surface of the mainopening part, an upper surface intersecting with the side surface, and alower surface intersecting with the side surface and opposing the uppersurface, a first insulator contacting the lower surface, a secondinsulator contacting the upper surface and the side surface, and a thirdinsulator contacting the second insulator and opposing the upper surfaceand the side surface via the second insulator, wherein the firstinsulator includes a first region located inside of the main openingpart, and a first opening part located in the first region, the secondinsulator includes a second region located inside of the main openingpart, and a second opening part located in the second region, the thirdinsulator includes a third region located inside of the main openingpart, and a third opening part located in the third region, the maskbody is sandwiched between the first insulator and the second insulator,and the third insulator includes a region located inside of the mainopening part more centrally than the first insulator and the secondinsulator and not overlapping with the first insulator, the secondinsulator and the mask body.

A manufacturing method of a vapor deposition mask arranged with aplurality of vapor deposition holes arranged regularly in one aspect ofthe present invention includes a step of forming a first insulator abovea substrate, a step of arranging a mask body including a plurality ofopening parts above the first insulator, a step of forming an openingpart of the first insulator inside of an opening part of the mask body,a step of forming a second insulator covering the mask body and thefirst insulator, a step of forming an opening part of the secondinsulator inside of an opening part of the first insulator, and a stepof removing the substrate.

A manufacturing method of a vapor deposition mask arranged with aplurality of vapor deposition holes arranged regularly in one aspect ofthe present invention includes a step of forming a first insulator abovea substrate, a step of arranging a mask body including a plurality ofopening parts above the first insulator, a step of forming an openingpart of the first insulator inside of an opening part of the mask body,a step of forming a second insulator covering the mask body and thefirst insulator, a step of forming an opening part of the secondinsulator which is an inner side of an opening part of the mask body sothat an opening part of the first insulator is arranged inside on aninner side of the opening of the second insulator, and a step ofremoving the substrate.

A manufacturing method of a vapor deposition mask arranged with aplurality of vapor deposition holes arranged regularly in one aspect ofthe present invention includes a step of forming a first insulator abovea substrate, a step of arranging a mask body including a plurality ofopening parts above the first insulator, a step of forming a secondinsulator covering the mask body and the first insulator, a step offorming an opening part of the first insulator and an opening part ofthe second insulator inside of an opening part of the mask body, a stepof forming a third insulator covering the first insulator, a step offorming an opening part of the third insulator inside of an opening partof the second insulator and an opening part of the first insulatorrespectively, and a step of removing the substrate.

BRIEF EXPLANATION OF THE DRAWINGS

FIG. 1 is a planar view diagram showing a schematic structure of a vapordeposition mask according to a first embodiment of the presentinvention;

FIG. 2 is a cross-sectional diagram showing a schematic structure of avapor deposition mask according to a first embodiment of the presentinvention;

FIG. 3 is a perspective view diagram showing a schematic structure of avapor deposition mask according to a first embodiment of the presentinvention;

FIG. 4 is a diagram showing a manufacturing method of a vapor depositionmask according to a first embodiment of the present invention;

FIG. 5 is a diagram showing a manufacturing method of a vapor depositionmask according to a first embodiment of the present invention;

FIG. 6 is a diagram showing a manufacturing method of a vapor depositionmask according to a first embodiment of the present invention;

FIG. 7 is a cross-sectional diagram showing a schematic structure of avapor deposition mask according to a second embodiment of the presentinvention;

FIG. 8 is a diagram showing a manufacturing method of a vapor depositionmask according to a second embodiment of the present invention;

FIG. 9 is a diagram showing a manufacturing method of a vapor depositionmask according to a second embodiment of the present invention;

FIG. 10 is a diagram showing a manufacturing method of a vapordeposition mask according to a second embodiment of the presentinvention;

FIG. 11 is a cross-sectional diagram showing a schematic structure of avapor deposition mask according to a third embodiment of the presentinvention;

FIG. 12 is a diagram showing a manufacturing method of a vapordeposition mask according to a third embodiment of the presentinvention;

FIG. 13 is a diagram showing a manufacturing method of a vapordeposition mask according to a third embodiment of the presentinvention;

FIG. 14 is a diagram showing a manufacturing method of a vapordeposition mask according to a third embodiment of the presentinvention;

FIG. 15 is a diagram showing a manufacturing method of a vapordeposition mask according to a third embodiment of the presentinvention;

FIG. 16 is a diagram showing a manufacturing method of an organic ELdisplay device according to a fourth embodiment of the presentinvention;

FIG. 17 is a diagram showing a manufacturing method of an organic ELdisplay device according to a fourth embodiment of the presentinvention;

FIG. 18 is a diagram showing a manufacturing method of an organic ELdisplay device according to a fourth embodiment of the presentinvention; and

FIG. 19 is a diagram showing the problems in a conventional vapordeposition mask.

EMBODIMENTS OF THE INVENTION

Each embodiment of the present invention is explained below whilereferring to the diagrams. However, it is possible to perform thepresent invention using various different forms within a scope that doesnot depart from the concept of the present invention, and the presentinvention should not be limited to the content described in theembodiments exemplified herein. In addition, in the diagrams, the width,thickness and shape of each component may be represented schematicallycompared to their actual form in order to better clarify explanation.These schematic diagrams are merely an example and should not limit aninterpretation of the present invention. In addition, in thespecification and each diagram, the same reference symbols are attachedto similar elements and elements that have been mentioned in previousdiagrams, and therefore a detailed explanation may be omitted.

First Embodiment <Schematic Structure of a Vapor Deposition Mask>

FIG. 1 shows a schematic structure of a vapor deposition mask 100according to a first embodiment of the present invention. FIG. 1(A) is aplanar view of the vapor deposition mask 100. FIG. 1(B) is an enlargedview with an enlarged frame part shown by 101 in FIG. 1(A).

The vapor deposition mask 100 of the first embodiment has a structure inwhich a mask body formed by a conductor is covered with an insulatorsuch as a resin and is arranged with a plurality of vapor depositionregions 102. A metal having a thickness of 30 to 200 μm formed by amagnetic metal such as nickel, a nickel alloy, invar or the like can beused as the conductor. The vapor deposition region 102 is arrangedcorresponding to a display region of the organic EL display device, forexample.

Therefore, when manufacturing a plurality of organic EL display deviceson a glass substrate, it is possible to collectively form a thin filmusing an organic material corresponding to each display region of aplurality of electroluminescent display devices by using the vapordeposition mask 100 of the present embodiment. Naturally, the number ofvapor deposition regions 102 can be set to an arbitrary number.

As is shown in FIG. 1(B), a plurality of vapor deposition holes 103 areformed in each vapor deposition region 102. In the present embodiment,although an example is shown in which slits are formed as the vapordeposition holes 103, it is also possible to arrange not only slits butalso opening parts of any shape such as a circle or rectangle and thelike according to a pixel arrangement of the organic EL display device.

Alignment marks 104 are arranged at the four corners of the vapordeposition mask 100. This is a marker on the mask side used foralignment between a substrate which is the object of vapor depositionand the vapor deposition mask 100. These may be arranged in the vicinityof a central part of each side.

Here, FIG. 2 shows a cross-sectional view taken along the line X-X ‘ofthe vapor deposition region 102 in FIG. 1(B). In addition, a perspectiveview centered on a slit part is shown in FIG. 3. In FIG. 2, although itappears that the mask body is separated into three parts, actually thethree parts are all physically connected as shown in FIG. 1(B).

In FIG. 2, 201 is a first insulator, 202 is a mask body (for example, amask material formed by a conductor), and 203 is a second insulator. Themask body 202 is a part serving as a basic skeleton of the vapordeposition mask 100 shown in FIG. 1, and is typically formed by amagnetic metal such as nickel, a nickel alloy, invar or the like. In thepresent embodiment, a metal foil (metal sheet) arranged with a smallthermal expansion coefficient and invar characteristics which isdifficult to be affected by heat is used as the mask body 202.

In addition, in the present embodiment, a cross-section of the mask body202 is a trapezoid. This is because an inner wall of the vapordeposition hole 204 (corresponding to the vapor deposition hole 103 inFIG. 1) in the deposition mask 100 has a taper shape. However, the shapeof the mask body 202 is not limited to a trapezoid, and a side surfaceof a trapezoid part forming the mask body in FIG. 2 may also be aconcave shape. In other words, the mask body 202 is not particularlylimited to a specific shape as long as the side surface of the mask body202 includes an incline.

It is possible to use an organic film formed by a resin such aspolyimide, epoxy, acrylic or polyethylene terephthalate (PET) as thefirst insulator 201 and second insulator 203. An inorganic film such assilicon nitride or silicon oxide may also be used. In addition, theseorganic films and inorganic films may be arbitrarily combined and used.That is, it may also contain silicon nitride or silicon oxide. Forexample, it is possible to form the first insulator 201 and secondinsulator 203 using the same type of organic film, and it is possible toform the first insulator 201 using an organic film and the secondinsulator 203 using an inorganic film.

A feature of the vapor deposition mask 100 of the present embodiment isthat the mask body 202 formed by a magnetic metal is covered by twoinsulators, the first insulator 201 and second insulator 203. In thisway, it is possible to realize a vapor deposition mask including finevapor deposition holes (slit shape or rectangular shape) whilemaintaining overall strength (rigidity).

In addition, since an inner wall of a vapor deposition hole of the vapordeposition mask 100 has a step shape and a substantially taper shape, ashadow is hardly formed on a vapor deposition material entering fromvarious angles, and it is possible to form a uniform vapor depositionfilm with few film thickness distributions.

Furthermore, even if a substrate which is the object of vapor depositionand the deposition mask 100 are in contact, the mask body 202 does notcome into direct contact with the substrate which is the object of vapordeposition. Therefore, no foreign objects (for example, metallic foreignobjects) are generated due to contact between the two, and a high yieldand highly reliable vapor deposition can be performed.

Here, when a film thickness of the first insulator 201 is Ha (typically5 to 20 μm), a thickness of the mask body 202 is Hb (typically 10 to 50μm), and a film thickness of the second insulator 203 is Hc (typically 1to 5 μm), it is preferred that the relationship Hc≦Ha is establishedbetween the film thickness (Ha) of the first insulator 201 and the filmthickness (Hc) of the second insulator 203. For example, in the vapordeposition mask 100 of the present embodiment, the film thickness (Ha)of the first insulator 201 is 10 μm, the film thickness (Hb) of the maskbody 202 is 30 μm, and the film thickness (Hc) of the second insulator203 is 5 μm.

In this way, a structure is formed in which an inner wall of the vapordeposition hole 204 is covered by the second insulator 203, and only thesecond insulator 203 with a film thickness (Hc) of about 1 to 5 μm isarranged at the bottom part of the vapor deposition hole 204. Therefore,as is shown in FIG. 19(A), a shadow is not formed on a vapor depositionmaterial (typically, organic material) at an opening end part.Therefore, it is possible to prevent a variation in a film thicknessdistribution of a vapor deposition film as explained using FIG. 19(B).

In addition, it is possible to reinforce the rigidity of the mask body202 and increase the overall rigidity of the vapor deposition mask 100by setting the film thickness (Ha) of the first insulator 201 to 10 to20 μm. Also in this case, by setting the film thickness (Hc) of thesecond insulator 203 to 3 to 5 μm, since no shadow is formed on thevapor deposition material at the bottom part of the vapor depositionhole, it is possible to prevent variation in a film thicknessdistribution of a vapor deposition film.

Furthermore, when a width (typically 25 to 45 μm) of a first openingpart (slit) formed in the first insulator 201 is Wa, a width (typically30 to 50 μm) of a main opening part formed in the mask body 202 is Wb,and a width (typically 20 to 40 μm) of a second opening part formed inthe second insulator 203 is Wc, it is preferred that the relationshipWc≦Wa≦Wb is established between the widths of these opening parts.

For example, in the vapor deposition mask 100 of the present embodiment,the width (Wa) of the first opening part formed in the first insulator201 is 35 μm, the width (Wb) of the main opening part formed in the maskbody 202 is 40 μm, and the width (Wc) of the second opening part formedin the second insulator 203 is 30 μm. In the present embodiment, a pitchof the vapor deposition holes 204 is set to 60 μm, however, it is notlimited to this value.

In FIG. 2, the width (Wc) of the second opening part formed in thesecond insulator 203 corresponds to the width (slit width) of the vapordeposition hole 103 shown in FIG. 1(B). That is, in the vapor depositionmask 100 of the present embodiment, the width (Wc) of the second openingpart formed in the second insulator 203 substantially determines anopening width of the vapor deposition hole 204 in the vapor depositionmask 100.

With such a structure, as is shown in FIG. 2, the first opening part ofthe first insulator 201 is located inside of the main opening partformed in the mask body 202, and the second opening part of the secondinsulator 203 is located further to the inside. That is, a structure isformed in which a step shaped (substantially taper shaped) step isformed on an inner wall of the vapor deposition hole 204, and a vapordeposition material entering from various angles enters easily.

That is, the vapor deposition mask 100 shown in FIG. 2 is arranged withthe mask body 202 including a main opening part, a side surface of themain opening part, an upper surface intersecting the side surface, and alower surface intersecting the side surface and opposing the uppersurface. Furthermore, the first insulator 201 is arranged in contactwith the lower surface and the second insulator 203 is arranged incontact with the upper surface and the side surface. The first insulator201 includes a first region located inside of the main opening part anda first opening part located in the first region. The second insulator203 includes a second region located inside of the main opening part anda second opening part located in the second region. The mask body 202 issandwiched between the first insulator 201 and the second insulator 203.One of the first insulator 201 and the second insulator 203 (the secondinsulator 203 in FIG. 2) is located further to the inside of the mainopening part than the other (the first insulator 201 in FIG. 2) and doesnot overlap the other and the mask body 202.

In addition, a film thickness of the second insulator 203 is thinnerthan a film thickness of the first insulator 201. Furthermore, in thevapor deposition mask 100 shown in FIG. 2, the second insulator 203 islocated further to the inside of the main opening part than the firstinsulator 201. In addition, the second opening part of the secondinsulator 203 is located further to the inside than the first openingpart of the first insulator 201. In addition, the second region locatedat an end of the second opening does not overlap with the firstinsulator 201 and the mask body 202.

Furthermore, in the vapor deposition mask 100 shown in FIG. 2, the firstregion includes a part which does not overlap with the second insulator203 and the mask body 202, and a step is formed inside of the mainopening part by this part and the second region.

In the structure of the present embodiment described above, the firstinsulator 201 located under the mask body 202 includes a predeterminedfilm thickness and can maintain the strength of the vapor depositionmask 100. In addition, the second insulator 203 which is thinner thanthe first insulator 201 is located on the innermost side of the vapordeposition hole 204 of the vapor deposition mask 100. That is, thethickness of the end part of the vapor deposition hole 204 can bereduced. In this way, incidence of a vapor deposition material can bereduced by the end part of the vapor deposition hole 204. Consequently,variation in a film thickness distribution shown in FIG. 19(A) and FIG.19(B) can be suppressed. This effect is more prominent as the vapordeposition hole 204 becomes smaller due to high definition. Therefore,the structure of the present embodiment has the effect of being able tomake the film thickness of a film to be deposited uniform withoutreducing the strength of a vapor deposition mask.

In addition, since the first opening part of the first insulator 201 islocated inside of the main opening part formed in the mask body 202, thefirst insulator 201 and the second insulator 203 are formed so as toface each other as is shown by the frame line 205. In this way, the maskbody 202 is sandwiched using the first insulator 201 and the secondinsulator 203 and the mask body 202 can be completely covered. As aresult, even when the substrate which is the object of vapor depositionand the vapor deposition mask 100 are brought into contact, it ispossible to prevent the generation of foreign objects due to contactbetween the two.

Furthermore, since the second insulator 203 is in contact with the firstinsulator 201 at a surface, the generation of defects due to filmpeeling of the first insulator 201 is also reduced and durability of avapor deposition mask can be improved.

<Manufacturing Method of a Vapor Deposition Mask>

FIG. 4 to FIG. 6 show a manufacturing method of the vapor depositionmask 100 according to the first embodiment of the present invention. InFIG. 4(A), a resin film formed from polyimide is formed as a firstinsulator 12 on a support substrate 11. The first insulator 12 can beformed by coating polyimide using a known spin-coating method orprinting method and then curing the polyimide by light irradiation orheating. In the vapor deposition mask 100 of the present embodiment, thefilm thickness (Ha) of the first insulator 12 is 10 μm.

Furthermore, a separate adhesive sheet (not shown in the diagram) may bearranged between the support substrate 11 and the first insulator 12 inorder to finally peel off the first insulator 12 from the supportsubstrate 11. For example, it is preferred to use an adhesive sheetincluding a property that can weaken adhesive strength by lightirradiation or heating such as a known dicing tape.

In the present embodiment, a glass substrate is used as the supportsubstrate 11. The support substrate 11 is used with the aim ofsupporting various thin films and mask bodies in the manufacturingprocess of a vapor deposition mask, and is finally removed when thevapor deposition mask 100 is completed on the supporting substrate 11.As a result, the material is not particularly limited, and any substratemay be used as long as it can support a resin film or a mask body (maskpattern) during a manufacturing process such as a metal substrate, aceramic substrate and a plastic substrate and the like.

It is possible to use not only polyimide but also an organic film (thinfilm formed by an organic material) formed by a resin such as epoxy,acrylic and polyethylene terephthalate as the first insulator 12. Inaddition, an inorganic film (thin film formed by an inorganic material)such as silicon oxide or silicon nitride may also be used. Furthermore,a stacked film obtained by arbitrarily combining these may also be used.

In FIG. 4(B), a mask body (conductor sheet arranged with an opening partfor vapor deposition) 13 which serves as a basic skeleton of a vapordeposition mask is adhered above the first insulator 12. A metal foil(metal sheet) using an invar material which is a magnetic metal is usedas the mask body 13. In the vapor deposition mask 100 of the presentembodiment, the thickness (Hb) of the mask body 13 is 30 μm.

In the present embodiment, the mask body 13 arranged in advance with aplurality of opening parts (slits) 14 is prepared (planar view is thesame as in FIG. 1(A)), and the mask body 13 is adhered to the firstinsulator 12 using an adhesive. Furthermore, it is also possible to makethe first insulator 12 function as an adhesive by adhering the mask body13 before curing the first insulator 12 and then curing the firstinsulator 12.

In the vapor deposition mask 100 of the present embodiment, a width (Wb)of the main opening part 14 arranged in the mask body 13 is 40 μm asdescribed above.

In addition, in the present embodiment, although an example was shown inwhich the mask body 13 prepared in advance is adhered, it is alsopossible to form a conductive film formed by a magnetic metal above thefirst insulator 12, and pattern the conductive film to form a mask body.For example, a nickel thin film is formed above the first insulator 12by a known plating method using nickel as a magnetic metal. Followingthis, it is possible to form the mask body by patterning the nickel thinfilm by known photolithography. Naturally, formation of the nickel thinfilm is not limited to a plating method, and it may also be formed usinga CVD method or sputtering method.

Next, in FIG. 5(A), the first insulator 12 is etched to form a pluralityof opening parts 15. As explained using FIG. 1, since the plurality ofopening parts 15 are formed in a stripe shape in the vapor depositionregion 102, the first insulator 12 is also formed in a stripe shape inthe vapor deposition region 102. However, the shape of the opening part15 is not limited to a stripe shape, and an appropriate shape may beselected according to the kind of pattern arrangement in which a vapordeposition material is deposited.

In the present embodiment, the opening part 15 is formed using laseretching. Since the film thickness of the first insulator 12 is 5 to 20μm (10 μm in the present embodiment), anisotropic etching in whichetching proceeds selectively in a vertical direction is preferred. Inthe present embodiment, although an example using laser etching isshown, anisotropic etching may also be performed by dry etching using anetching gas.

In the vapor deposition mask 100 of the present embodiment, a width (Wa)of the opening part 15 arranged in the first insulator 12 is 35 μm asdescribed above.

Furthermore, in the present embodiment, the first insulator 12 in FIG.5(A) is etched after forming the mask body 13 in FIG. 4(B). However, itis also possible to reverse this order by adhering or forming the maskbody 13 after forming the opening part 15 by etching the first insulator12.

Next, in FIG. 5(B), the second insulator 16 is formed to cover the maskbody 13 and the first insulator 12. The second insulator 16 can beformed by coating polyimide using a known spin-coating method orprinting method and then curing the polyimide by light irradiation orheating. In the vapor deposition mask 100 of the present embodiment, afilm thickness (Hc) of the second insulator 16 is 5 μm.

It is possible to use not only polyimide but also an organic film (thinfilm formed by an organic material) formed by a resin such as epoxy,acrylic and polyethylene terephthalate as the second insulator 16. Inaddition, an inorganic film (thin film formed by an inorganic material)such as silicon oxide or silicon nitride may also be used. In addition,a stacked film obtained by arbitrarily combining these may also be used.

At this time, it is preferred to use polyimide which has low viscositywhen coating polyimide as the second insulator 16. In this way, aplanarization effect can be provided to the second insulator 16, and adeposition hole of the final vapor deposition mask 100 can be formedinto a smoother taper shape.

Next, in FIG. 6(A), the second insulator 16 is processed by laseretching to form a plurality of opening parts 17. In the presentembodiment, since the plurality of opening parts 17 are formed in astripe shape in the vapor deposition region 102, the second insulator 16is also formed in a stripe shape in the vapor deposition region 102.

At this time, the opening part 17 is formed so that the mask body 13 andthe first insulator 12 are completely covered by the second insulator16. That is, the opening part 17 of the second insulator 16 is formedinside of the opening part 15 of the first insulator 12 formed in FIG.5(A). A width (Wc) of the opening part 17 arranged in the secondinsulator 16 is 30 μm as described above.

Furthermore, in the present embodiment, although an example is shown inwhich the opening part 17 is formed by laser etching, anisotropicetching may also be performed by dry etching using an etching gas thesame as etching of the first insulator 12.

Finally, in FIG. 6(B), the support substrate 11 is peeled off. In thisway, the vapor deposition mask 100 of the present embodiment arrangedwith the structure and effect explained using FIG. 1 to FIG. 3 iscompleted.

According to the manufacturing method of the vapor deposition mask 100in the present embodiment, the mask body (conductive sheet) 13 which isthe basic skeleton of a vapor deposition mask, is sandwiched between thefirst insulator 12 and the second insulator 16. In this way, it ispossible to realize the vapor deposition mask 100 including fine vapordeposition holes (slits or rectangular holes) while maintaining thestrength (rigidity) of the entire vapor deposition mask.

In addition, since an inner wall of the deposition hole 103 of the finalvapor deposition mask 100 has a step shape (substantially taperedshape), there are hardly any shadows formed on the vapor depositionmaterial which enters from various angles. Therefore, it is possible tomanufacture the vapor deposition mask 100 which can form a vapordeposition film having a uniform film thickness distribution.

Furthermore, by adopting a structure in which the mask body 13 issandwiched between the first insulator 12 and the second insulator 16,even if a substrate which is the object of vapor deposition is made tocontact the vapor deposition mask 100, the mask body 13 does not comeinto direct contact with the substrate which is the object of vapordeposition. Therefore, it is possible to manufacture a highly reliablevapor deposition mask in which foreign objects (for example, metalforeign objects) are generated due to contact between the two.

In addition, when the second insulator 16 is etched, since etching isperformed in a state where the mask body 13 and the first insulator 12are covered by the second insulator 16, problems such as film peeling ofthe first insulator 12, thermal expansion of the mask body 13 andgeneration of foreign objects from the mask body 13 can be reduced.

Second Embodiment <Schematic Structure of a Vapor Deposition Mask>

A cross-sectional structure of a vapor deposition mask 200 according toa second embodiment of the present invention is shown in FIG. 7.Although a planar view of the schematic structure of the vapordeposition mask 200 of the second embodiment is as shown in FIG. 1, across-sectional structure is different from that of the vapor depositionmask 100 of the first embodiment. Specifically, the vapor depositionmask 200 of the second embodiment is different to the vapor depositionmask 100 of the first embodiment in that the first opening part formedin the first insulator is located further to the inside than the secondopening part formed in the second insulator. The other points are thesame as those of the vapor deposition mask 100 of the first embodiment.

In FIG. 7, 701 is a first insulator, 702 is a mask body and 703 is asecond insulator. In the present embodiment, a metal foil formed by aninvar material is used as the mask body 702, and polyimide is used asthe first insulator 701 and the second insulator 703. The materialsforming the first insulator 701, the mask body 702, and the secondinsulator 703 are not limited to these as explained in the firstembodiment.

Here, when a film thickness of the first insulator 701 is Ha (typically1 to 5 μm), a thickness of the mask body 702 is Hb (typically 10 to 50μm) and a film thickness of the second insulator 703 is Hc (typically 10to 20 μm), it is preferred that the relationship Ha≦Hc is establishedbetween the thickness (Ha) of the first insulator 701 and the filmthickness (Hc) of the second insulator 703. For example, in the vapordeposition mask 200 of the present embodiment, the film thickness (Ha)of the first insulator 701 is 5 μm, the film thickness (Hb) of the maskbody 702 is 30 μm and the film thickness (Hc) of the second insulator703 is 10 μm.

In this way, a structure is formed in which only the first insulator 701having the film thickness Ha is arranged in the vicinity of a holethrough which a vapor deposition material passes at the bottom part of avapor deposition hole 704. As a result, as is shown in FIG. 19(A),shadows are not formed on the vapor deposition material (typically anorganic material) at an opening end part. Therefore, it is possible toprevent variation in a film thickness distribution of a vapor depositionfilm as explained using FIG. 19(B).

In addition, by setting the film thickness (Hc) of the second insulator703 to 10 to 20 μm, rigidity of the mask body 702 is reinforced, and itis possible to increase overall rigidity of the vapor deposition mask200. Also in this case, since shadows are not formed on the vapordeposition material at an opening end part by setting the film thickness(Ha) of the first insulator 701 to 3 to 5 μm, it is possible to preventvariation in a film thickness distribution of a vapor deposition film.

Furthermore, when the width (typically, 20 to 40 μm) of the firstopening part formed in the first insulator 701 is Wa, the width(typically, 30 to 50 μm) of the main opening part formed in the maskbody 702 is Wb, and the width (typically 25 to 4 μm) of the secondopening part formed in the second insulator 703 is Wc, it is preferredthat the relationship Wa≦Wc≦Wb is established between the widths ofthese opening parts. For example, in the vapor deposition mask 200 ofthe present embodiment, the width (Wa) of the first opening part formedin the first insulator 701 is 30 μm, the width (Wb) of the main openingpart formed in the mask body 702 is 40 μm and the width (Wc) of thesecond opening part formed in the second insulator 703 is 35 μm.

In FIG. 7, the width (Wa) of the first opening part formed in the firstinsulator 701 corresponds to the width (slit width) of the vapordeposition hole 103 shown in FIG. 1(B). That is, in the vapor depositionmask 200 of the present embodiment, the width (Wa) of the first openingpart formed in the first insulator 701 substantially determines theopening width of the vapor deposition hole 704 in the vapor depositionmask 200.

By adopting such a structure, as is shown in FIG. 7, the second openingpart of the second insulator 703 is located inside of the main openingpart formed in the mask body 702, and the first opening part of thefirst insulator 701 is located further to the inside. That is, a stepshaped (substantially tapered shape) step is formed on an inner wall ofthe vapor deposition hole 704, and a vapor deposition material enteringfrom various angles enters more easily.

That is, in the vapor deposition mask 200 shown in FIG. 7, the firstinsulator 701 is located further to the inside of the main opening partthan the second insulator 703, and the first opening part of the firstinsulator 701 is located further to the inside than the second openingpart of the second insulator 703. Furthermore, a region of the firstinsulator 701 located at an end part of the first opening part does notoverlap with the second insulator 703 and the mask body 702. Inaddition, a film thickness of the first insulator 701 is thinner than afilm thickness of the second insulator 703. Furthermore, the firstinsulator 701 includes a part which does not overlap the secondinsulator 703 and the mask body 702, and a step is formed on the insideof the main opening part by this part and the second insulator 703.

In addition, the first insulator 701 and the second insulator 703contact each other at a surface as indicated by the frame line 705. Inthis way, the mask body 702 can be completely covered by the firstinsulator 701 and the second insulator 703. As a result, even when asubstrate which is the object of vapor deposition and the vapordeposition mask 200 are brought into contact, it is possible to preventthe generation of foreign objects due to contact between the two.

<Manufacturing Method of a Vapor Deposition Mask>

A manufacturing method of the vapor deposition mask 200 according to thesecond embodiment of the present invention is shown in FIG. 8 to FIG.10. Furthermore, in the vapor deposition mask 200 of the secondembodiment, except the cross-sectional structure and film thicknessbeing different, it is possible to use an insulator or a conductorformed by the same material as that of the vapor deposition mask 100 ofthe first embodiment. Therefore, in the present embodiment, although notrepeatedly described, each element such as an insulator and a conductoris not limited to the example described in the present embodiment, andit is possible to use the materials described in the first embodiment.

In FIG. 8(A), a resin film formed of polyimide is formed as a firstinsulator 22 on a support substrate 21 formed by a glass substrate. Thefirst insulator 12 can be formed by coating polyimide using a knownspin-coating method or printing method and then curing the polyimide bylight irradiation or heating. In the vapor deposition mask 200 of thepresent embodiment, a film thickness (Ha) of the first insulator 12 isset to 5 μm.

Furthermore, a separate adhesive sheet (not shown in the diagram) mayalso be arranged between the support substrate 21 and the firstinsulator 22 in the present embodiment the same as in the firstembodiment.

In FIG. 8(B), a mask body (conductive sheet) 23 serving as a basicskeleton of a vapor deposition mask is adhered onto the first insulator22. In the present embodiment, a metal foil (metal sheet) using an invarmaterial which is a magnetic metal is used as the mask body. In thevapor deposition mask 200 of the present embodiment, the film thickness(Hb) of the mask body 23 is 30 μm.

Furthermore, it is possible to make the first insulator 22 function asan adhesive by adhering the mask body 23 before curing the firstinsulator 22 and then curing the first insulator 22.

In the vapor deposition mask 200 of the present embodiment, the width(Wb) of the main opening part 24 arranged in the mask body 23 is 40 μmas described above.

In this embodiment, although an example was shown in which the mask body23 prepared in advance is adhered, the mask body may be formed bypatterning after forming the conductive film by a known method asexplained in the first embodiment.

Next, in FIG. 9(A), the first insulator 22 is etched to form a pluralityof opening parts 25. In the present embodiment, the opening part 25 isformed by laser etching. Naturally, it is also possible to useanisotropic etching by dry etching using an etching gas instead of laseretching.

In the vapor deposition mask 200 of the present embodiment, the width(Wa) of the opening part 25 arranged in the first insulator 22 is 30 μmas described above.

Furthermore, although the first insulator 22 is etched after the maskbody 23 is formed in the present embodiment, it is also possible toadhere or form the mask body 23 after forming the opening part 25 byetching the first insulator 22.

In FIG. 9(B), a polyimide film is formed as the second insulator 26 tocover the mask body 23 and the first insulator 22. The second insulator26 can be formed by coating polyimide using a known spin-coating methodor printing method and then curing the polyimide by light irradiation orheating. In the vapor deposition mask 200 of the present embodiment, thefilm thickness (Hc) of the second insulator 26 is 10 μm.

At this time, it is preferred to use polyimide which has a low viscositywhen coating polyimide as the second insulator 26. In this way, aplanarization effect can be provided to the second insulator 26, and theopening part of the final vapor deposition mask can be formed into asmoother taper shape.

Next, in FIG. 10(A), the second insulator 26 is processed by laseretching to form a plurality of opening parts 27. In the presentembodiment, since the plurality of opening parts 27 are formed in astripe shape in a vapor deposition region, the second insulator 26 isalso formed in a stripe shape in the vapor deposition region.

At this time, the opening part 27 is formed so that the mask body 23 iscompletely covered by the second insulator 26. Specifically, the openingpart 27 is formed to be wider than the opening part 25 formed in FIG.9(A), and the mask body 23 is sandwiched between the first insulator 22and the second insulator 26. The width (Wc) of the opening part 27arranged in the second insulator 26 is 35 μm as described above.

Furthermore, in the present embodiment, although an example was shown inwhich the opening part 27 is formed by laser etching, anisotropicetching using an etching gas can also be used the same as the etching ofthe first insulator 22. In the present embodiment, since the firstinsulator 22 and the second insulator 26 are formed from the samepolyimide, time control is strictly performed when the second insulator26 is etched. In this way, it is possible to minimize the amount ofetching of the first insulator 22 after etching of the second insulator26 is completed.

Finally, in FIG. 10(B), the support substrate 21 is peeled off. In thisway, the vapor deposition mask 200 of the present embodiment includingthe structure and effect explained using FIG. 7 is completed.

According to the manufacturing method of the vapor deposition mask 200in the present embodiment, the mask body (conductive sheet) 23 servingas the basic skeleton of the vapor deposition mask is sandwiched betweenthe first insulator 22 and the second insulator 26. In this way, it ispossible to realize a vapor deposition mask including fine vapordeposition holes (slits or rectangular holes) while maintaining thestrength (rigidity) of the entire vapor deposition mask.

In addition, since an inner wall of the vapor deposition hole 704 of thefinal vapor deposition mask 200 has a step shape (substantially taperedshape), shadows are hardly formed on the vapor deposition materialentering from various angles. Therefore, it is possible to manufacture avapor deposition mask 200 which can form a vapor deposition film havinga uniform film thickness distribution.

Furthermore, by adopting a structure in which the mask body 23 issandwiched between the first insulator 22 and the second insulator 26,even if the substrate which is the object of vapor deposition and thevapor deposition mask 200 are brought into contact, the mask body 23does not come into direct contact with the substrate which is the objectof vapor deposition. Therefore, it is possible to manufacture a highlyreliable vapor deposition mask in which foreign objects are notgenerated (for example, metallic foreign objects) due to contact betweenthe two.

In addition, since etching is performed in a state where the mask body23 is covered by the second insulator 26 at the time of etching thesecond insulator 26, it is possible to reduce problems such as thermalexpansion of the mask body 23 and generation of foreign objects from themask body 23.

Third Embodiment <Schematic Structure of a Vapor Deposition Mask>

A cross-sectional structure of a vapor deposition mask 300 according toa third embodiment of the present invention is shown in FIG. 11.Although the schematic structure of the vapor deposition mask 300 of thethird embodiment is as shown in FIG. 1, a cross-sectional structure isdifferent from that of the vapor deposition mask 100 of the firstembodiment. Specifically, the vapor deposition mask 300 of the thirdembodiment is different from the vapor deposition mask 100 of the firstembodiment in that the mask body is sandwiched by two insulators andthen covered with another insulator. The other points are the same asthose of the vapor deposition mask of the first embodiment.

In FIG. 11, 1101 is a first insulator, 1102 is a mask body, 1103 is asecond insulator, and 1104 is a third insulator. In the presentembodiment, a metal foil made of an invar material is used as the maskbody 1102, and polyimide is used as the first insulator 1101, the secondinsulator 1103 and the third insulator 1104. The materials forming thefirst insulator 1101, the mask body 1102, the second insulator 1103 andthe third insulator 1104 are not limited to these as explained in thefirst embodiment.

That is, the first insulator 1101, the second insulator 1103 and thethird insulator 1104 can be formed not only by polyimide but also by anorganic film (thin film formed by an organic material) formed by a resinsuch as epoxy, acrylic, and polyethylene terephthalate. In addition, itis also possible to use an inorganic film (thin film formed by aninorganic material) such as silicon oxide or silicon nitride.Furthermore, an organic film and inorganic film may be arbitrarilycombined.

Here, when a film thickness of the first insulator 1101 is Ha (typically1 to 20 μm), a film thickness of the mask body 1102 is Hb (typically 30to 200 μm), a film thickness of the second insulator 1103 is Hc(typically 1 to 20 μm) and a film thickness of the third insulator 1104is Hd (typically 1 to 5 μm), it is preferred that the relationship Hd≦Haor Hd≦Hc is established between the film thickness (Ha) of the firstinsulator 1101, the film thickness (Hc) of the second insulator 1103,and the film thickness (Hd) of the third insulator 1104. For example, inthe vapor deposition mask 300 of the present embodiment, the filmthickness (Ha) of the first insulator 1101 is 10 μm, the thickness (Hb)of the mask body 1102 is 30 μm, the film thickness (Hc) of the secondinsulator 1103 is 10 μm and the film thickness (Hd) of the thirdinsulator 1104 is 5 μm.

In this way, an inner wall of a vapor deposition hole 1105 is covered bythe third insulator 1104, and only the third insulator 1104 with a filmthickness (Hd) of about 3 to 5 μm is arranged at a bottom part thereof.As a result, as is shown in FIG. 19(A), shadows are not formed on thevapor deposition material (typically, an organic material) at an openingend part. Therefore, it is possible to prevent variation in a filmthickness distribution of a vapor deposited film as explained using FIG.19(B).

In addition, by setting the film thickness (Ha) of the first insulator1101 and the film thickness (Hc) of the second insulator 1103 to 10 to20 μm, the rigidity of the mask body 1102 is reinforced and it ispossible to increase the rigidity of the entire vapor deposition mask300. Even in this case, since shadows are not formed on a vapordeposition material at an opening end part by setting the film thickness(Hd) of the third insulator 1104 to 3 to 5 μm, it is possible to preventa variation in film thickness distribution of a vapor deposition film.

Naturally, it is also possible to form the first insulator 1101, thesecond insulator 1103, and the third insulator 1104 as inorganicinsulators of about 1 μm and form a taper shape which also serves as areinforcement of an opening part.

Furthermore, when a width (typically, 25 to 45 μm) of the first openingpart formed in the first insulator 1101 is Wa, a width (typically, 30 to50 μm) of the main opening part formed in the mask body 1102 is Wb, awidth (typically 25 to 45 μm) of the second opening part formed in thesecond insulator 1103 is Wc, and a width (typically 20 to 40 μm) of thethird opening part formed in the third insulator 1104 is Wd, it ispreferred that the relationship Wd≦Wa≈Wc≦Wb is established between thewidths of these opening parts.

Furthermore, in the present embodiment, since an opening part is formedby collectively etching the first insulator 1101 and the secondinsulator 1103, the film thickness (Ha) of the first insulator 1101 andthe film thickness (Hc) of the second insulator 1103 are almost equal.Here, “almost equal” includes not only the case of a complete match butalso the case of a slight difference. In the description related to thewidth of the opening part above, this point is expressed as Wa≈Wc. Thatis, since both the first insulator 1101 and the second insulator 1103have a film thickness of 10 to 20 μm, in the case where etching isperformed so that a cross-section has a taper shape, a slight differenceoccurs between the opening widths of the first insulator 1101 and thesecond insulator 1103.

In the vapor deposition mask 300 of the present embodiment, the width(Wa) of the first opening part formed in the first insulator 1101 is 35μm, the width (Wb) of the main opening part formed in the mask body 1102is 40 μm, the width (Wc) of the second opening part formed in the secondinsulator 1103 is 35 μm and the width (Wd) of the third opening partformed in the third insulator 1104 is 30 μm.

In FIG. 11, the width (Wd) of the third opening part formed in the thirdinsulator 1104 corresponds to the width (slit width) of the vapordeposition hole 103 shown in FIG. 1(B). That is, in the vapor depositionmask 300 of the present embodiment, the width (Wd) of the third openingpart formed in the third insulator 1104 substantially determines theopening width of the vapor deposition hole 1105 in the vapor depositionmask 300.

By adopting such a structure, as is shown in FIG. 11, opening parts ofthe first insulator 1101 and the second insulator 1103 are respectivelylocated inside of the main opening part formed in the mask body 1102,and the third opening part of the third insulator 1104 is located evenfurther to the inside. That is, a step shaped (substantially taperedshape) step is formed on the inner wall of the vapor deposition hole1105, and a vapor deposition material entering from various anglesenters more easily.

That is, the deposition mask 300 shown in FIG. 11 is arranged with themask body 1102 including a main opening part, a side surface of the mainopening part, an upper surface intersecting the side surface, and alower surface intersecting the side surface and opposing the uppersurface. Furthermore, the first insulator 1101 is arranged in contactwith the lower surface, the second insulator 1103 is arranged in contactwith the upper surface and the side surface, and the third insulator1104 is arranged in contact with the second insulator 1103 and opposingthe upper surface and the side surface via the second insulator 1103.The first insulator 1101 includes a first region located inside of themain opening part and a first opening part located in the first region.The second insulator 1103 includes a second region located inside of themain opening part and a second opening part located in the secondregion. The third insulator 1104 includes a third region located insideof the main opening part and a third opening part located in the thirdregion. The mask body 1102 is sandwiched between the first insulator1101 and the second insulator 1103. The third insulator 1104 includes aregion located further to the inside of the main opening part than thefirst insulator 1101 and the second insulator 1103 and does not overlapwith the first insulator 1101, the second insulator 1103 and the maskbody 1102.

Furthermore, in the vapor deposition mask 300 shown in FIG. 11, amongthe film thickness of the first insulator 1101, the film thickness ofthe second insulator 1103 and the film thickness of the third insulator1104, the film thickness of the third insulator 1104 is the thinnest. Inaddition, among the first opening part, the second opening part and thethird opening part, the third opening part is located at the innermostside. In addition, the third region is formed with a step inside of amain opening part by a part which does not overlap with the firstinsulator 1101, the second insulator 1103, and the mask body 1102, apart which contacts with a side surface of the first opening part and aside surface of the second opening part, and a part which contacts withan upper surface of the second region described above.

In addition, the first insulator 1101 and the second insulator 1103 arein contact at a surface as shown by a frame line 1106 inside the mainopening part formed in the mask body 1102. In this way, the mask body1102 can be completely covered using the first insulator 1101 and thesecond insulator 1103. As a result, even if the vapor deposition mask300 is brought into contact with a substrate which is the object ofvapor deposition, it is possible to prevent the generation of foreignobjects due to contact between the two.

<Manufacturing Method of a Vapor Deposition Mask>

A manufacturing method of the vapor deposition mask 300 according to thethird embodiment of the present invention is shown in FIGS. 12 to 15.Furthermore, apart from a cross-sectional structure and the filmthickness of the insulation films being different, an insulator or aconductor formed by the same material as that of the vapor depositionmask 100 of the first embodiment can be used for the vapor depositionmask 300 of the third embodiment. Therefore, although not repeatedlydescribed in the present embodiment, each element such as an insulatorand a conductor is not limited to the example shown in the presentembodiment, and the material explained in the first embodiment can beused.

In FIG. 12(A), a resin film formed by polyimide is formed as a firstinsulator 32 above a support substrate 31 formed by a glass substrate.

The first insulator 32 can be formed by coating polyimide by a knownspin-coating method or printing method and then curing the polyimide bylight irradiation or heating. In the vapor deposition mask 300 of thepresent embodiment, a film thickness (Ha) of the first insulator 32 isset to 10 μm.

Furthermore, a separate adhesive sheet (not shown in the diagram) mayalso be provided between the support substrate 31 and the firstinsulator 32 in the present embodiment the same as in the firstembodiment.

In FIG. 12(B), a mask body (conductor sheet) 33 serving as a basicskeleton of a vapor deposition mask is adhered onto the first insulator32. In the present embodiment, a metal foil (metal sheet) using an invarmaterial which is a magnetic metal is used as the mask body. In thevapor deposition mask 300 of the present embodiment, the thickness (Hb)of the mask body 33 is 30 μm.

Furthermore, it is also possible to make the first insulator 32 functionas an adhesive by adhering the mask body 33 before curing the firstinsulator 32 and then curing the first insulator 32.

In the vapor deposition mask 300 of the present embodiment, the width(Wb) of a main opening part 34 arranged in the mask body 33 is 40 μm asdescribed above.

In addition, in the present embodiment, although an example was shown inwhich the mask body 33 prepared in advance is adhered, a mask body mayalso be formed by patterning after forming a conductive film by a knownmethod as described in the first embodiment.

Next, in FIG. 13(A), a second insulator 35 formed from polyimide isformed to cover the mask body 33. The second insulator 35 can be formedby coating polyimide using a known spin-coating method or printingmethod and then curing the polyimide by light irradiation or heating. Inthe vapor deposition mask 300 of the present embodiment, a filmthickness (Hc) of the second insulator 35 is set to 10 μm.

In FIG. 13 (B), the first insulator 32 and the second insulator 35 arecollectively etched to form a plurality of opening parts 36. In thepresent embodiment, the opening part 36 is formed by laser etching.Naturally, it is also possible to use anisotropic etching by dry etchingusing an etching gas instead of laser etching.

In the vapor deposition mask 300 of the present embodiment, the widths(Wa, Wc) of the opening parts 36 respectively arranged in the firstinsulator 32 and the second insulator 35 are 30 μm as described above.

Next, in FIG. 14(A), a polyimide film is formed as the third insulator37 to cover the first insulator 32, the mask body 33, and the secondinsulator 35. The third insulator 37 can be formed by coating polyimideusing a known spin-coating method or printing method and then curing thepolyimide by light irradiation or heating. In the vapor deposition mask300 of the present embodiment, a film thickness (Hd) of the thirdinsulator 37 is 5 μm.

At this time, it is preferred to use polyimide which has low viscositywhen coating polyimide as the third insulator 37. In this way, aplanarization effect can be provided to the third insulator 37, and avapor deposition hole of the final vapor deposition mask can be formedinto a smoother taper shape.

In FIG. 14(B), the third insulator 37 is processed by laser etching toform a plurality of opening parts 38. In the present embodiment, sincethe plurality of opening parts 38 are formed in a stripe shape in avapor deposition region, the third insulator 37 is also formed in astripe shape in the vapor deposition region.

At this time, the opening part 38 is formed so that the first insulator32 and the second insulator 35 are completely covered by the thirdinsulator 37. Specifically, the opening part 38 is formed inside of theopening 36 formed in FIG. 13(B). The width (Wd) of the opening 38arranged in the third insulator 37 is 30 μm as described above.

In the present embodiment, although an example was shown in which theopening part 38 is formed by laser etching, it is also possible to useanisotropic etching the same as the etching of the first insulator 32and the second insulator 35.

Finally, in FIG. 15, the support substrate 31 is peeled off. In thisway, the vapor deposition mask 300 of the present embodiment includingthe structure and effect explained using FIG. 11 is completed.

According to the manufacturing method of the vapor deposition mask 300in the present embodiment, a structure is obtained in which the maskbody (conductor sheet) 33 serving as the basic skeleton of a vapordeposition mask is sandwiched between the first insulator 32 and thesecond insulator 35. In this way, it is possible to realize a vapordeposition mask including fine vapor deposition holes (slits orrectangular holes) while maintaining the strength (rigidity) of theentire vapor deposition mask.

In addition, since an inner wall of the vapor deposition hole 1105 ofthe final vapor deposition mask 300 has a step shape (substantiallytapered shape), shadows are hardly formed on a vapor deposition materialentering from various angles. Therefore, it is possible to manufacturethe vapor deposition mask 300 which can form a vapor deposition filmhaving a uniform film thickness distribution.

Furthermore, by adopting the structure in which the mask body 33 issandwiched between the first insulator 32 and the second insulator 35,even if a substrate which is the object of vapor deposition and thevapor deposition mask 300 are brought into contact, the mask body 33does not come into direct contact with the substrate which is the objectof vapor deposition. Therefore, it is possible to manufacture a highlyreliable vapor deposition mask in which foreign objects (for example,metallic foreign objects) are not generated due to contact between thetwo.

In addition, since etching is performed in a state where the mask body33 is covered by the first insulator 32 and the second insulator 35 whenetching the third insulator 37, it is possible to reduce problems suchas thermal expansion of the mask body 33 and generation of foreignobjects from the mask body 33.

Fourth Embodiment

In the present embodiment, an example is shown in which an organic ELdisplay device is formed using any one of the vapor deposition masks ofthe first embodiment to the third embodiment of the present invention.FIG. 16 is a diagram showing a manufacturing method of an organic ELdisplay device according to the present embodiment.

In FIG. 16(A), a thin film transistor (TFT) 1602 is formed on asubstrate 1601 by a known method. Since the organic EL display device ofthe present embodiment is a top emission structure that emits light in avertically upward direction (direction toward an opposing substrate)with respect to a pixel electrode 1603, a glass substrate, a ceramicsubstrate, a plastic substrate or a metal substrate may be used.

In addition, the thin film transistor 1602 may have a top gate structureor a bottom gate structure. In the organic EL display device of thepresent embodiment, the thin film transistor 1602 functions as aswitching element in a pixel region, and its structure and type ofconductivity (n type or P type) may be determined appropriately.

A pixel electrode 1603 formed by a known method is connected to the thinfilm transistor 1602. In the present embodiment, it is preferred to usea metal film having high reflectance as the pixel electrode 1603 inorder to form the top emission structure as described above. Inaddition, a stacked structure of ITO (Indium Tin Oxide) which is atransparent conductive film with a high work function and a metal filmmay be used. The pixel electrode 1603 functions as an anode of theorganic EL element.

In FIG. 16(B), a bank 1604 is formed for each gap between a plurality ofpixel electrodes 1603. The bank 1604 may be formed using a resin filmsuch as polyimide or acrylic and the like. In addition, not only a resinmaterial, but an inorganic material such as silicon nitride or siliconoxide may also be used, or a resin material and an inorganic materialmay be stacked.

After forming the bank 1604, a light emitting layer 1606 which forms anEL element is formed by a vapor deposition method using a vapordeposition mask 1605 as shown in FIG. 17(A). Here, formation of thelight emitting layer 1606 corresponding to any one of RGB isexemplified. Although the vapor deposition mask 1605 is exemplifiedusing the structure explained in the first embodiment, any of the vapordeposition masks of the first embodiment to the third embodiment may beused.

At this time, the vapor deposition mask 1605 is fixed in a state inwhich tension is applied to a frame formed by a nickel alloy orstainless steel. In addition, the vapor deposition mask 1605 is pulledby a magnetic force from the rear side of a substrate 1601 (side onwhich an element is not formed), and is used in close contact with aformation surface of the EL element.

The vapor deposition mask 1605 is arranged with a vapor deposition hole1607 having a width corresponding to each individual pixel. An organicmaterial forming the light emitting layer 1606 passes through the vapordeposition hole 1607 of the vapor deposition mask 1605 and accumulateson the surface of the pixel electrode 1603 to form the light emittinglayer 1606. In the present embodiment, a red emission layer which emitsred light, a green emission layer which emits green light and a blueemission layer which emits blue light are sequentially formed as aseparate vapor deposition process while shifting the vapor depositionmask 1605.

Furthermore, in this embodiment, although an example is shown in whichonly a light emitting layer is formed, functional layers such as anelectron injection layer, an electron transport layer, a hole injectionlayer and a hole transport layer may also be formed by a vapordeposition method using the same vapor deposition mask 1605. Inaddition, not only a structure arranged in a stripe shape but a dotshaped or slot shaped structure opened in each pixel unit may also bealigned with the shape of a pixel.

Next, as is shown in FIG. 17(B), a common electrode 1609 which functionsas the cathode of the EL element and a protective film 1610 are formedafter forming light emitting layers 1606 a to 1606 c of each pixel. Itis preferred that the common electrode 1609 is formed by a transparentconductive film such as ITO or IZO (zinc oxide doped with indium) havingtranslucency. It is preferred to use an insulation film (for example,silicon nitride film) having high airtightness properties in order toprevent moisture and contaminants from entering the interior of theprotective film 1610. In addition, a stress relieving structure and astructure for dealing with foreign objects may be adopted as amultilayer structure in which an organic film such as an acrylic resinis sandwiched between lower layers or intermediate layers.

In this way, the active matrix substrate shown in FIG. 17(B) iscompleted. An active matrix substrate refers to a substrate on which aswitching element formed by a thin film transistor or the like and alight emitting element such as an organic EL element are formed.

Finally, as is shown in FIG. 18, an opposing substrate is bonded tocomplete the organic EL display device of the present embodiment. InFIG. 18, 1611 is a glass substrate. In addition, a red color filter 1612a corresponding to a red pixel, a green color filter 1612 bcorresponding to a green pixel and a blue color filter 1612 ccorresponding to a blue pixel may be used according to necessity. 1613is a black mask arranged between each color filter. Each of these colorfilters 1612 a to 1612 c and the black mask 1613 may be formed by aknown method.

The opposing substrate in the organic EL display device of the presentembodiment is formed by the glass substrate 1611, red color filter 1612a, green color filter 1612 b, blue color filter 1612 c and the blackmask 1613. Naturally, the color filters 1612 a to 1612 c and the blackmask 1613 are not essential structures and can be omitted.

Next, the active matrix substrate shown in FIG. 17(B) and the opposingsubstrate are adhered using a filling layer 1614 formed by a resin andthe organic EL display device shown in FIG. 18 is completed. It ispossible to use a transparent resin such as polyimide, acrylic or thelike as the filling layer 1614, and the filling layer 1614 may be curedby light irradiation after filling a space between the active matrixsubstrate and the opposing substrate.

According to the manufacturing method of the organic EL display deviceof the present embodiment explained above, by forming a light emittinglayer using the vapor deposition mask 1605 of the present invention, itis possible to form a light emitting layer having a uniform filmthickness distribution. In addition, since a mask body forming the vapordeposition mask 1605 does not directly touch the pixel electrode 1603 orthe bank 1604 when forming a light emitting layer, yield of themanufacturing process is improved.

EXPLANATION OF REFERENCE SYMBOLS

-   100: Vapor Deposition Mask-   102: Vapor Deposition Region-   103: Vapor Deposition Hole-   104: Alignment Mark-   201: First Insulator-   202: Mask Body-   203: Second Insulator-   204: Opening Part

What is claimed is:
 1. A vapor deposition mask comprising: a mask bodyhaving a main opening part, a side surface of the main opening part, anupper surface intersecting with the side surface, and a lower surfaceintersecting with the side surface and opposing the upper surface; afirst insulator contacting the lower surface; and a second insulatorcontacting the upper surface and the side surface; wherein the firstinsulator includes a first region located inside of the main openingpart, and a first opening part located in the first region; the secondinsulator includes a second region located inside of the main openingpart, and a second opening part located in the second region, the maskbody is sandwiched between the first insulator and the second insulator;and one of the first insulator and the second insulator includes aregion located inside of the main opening part more centrally than another and not overlapping with the other and the mask body.
 2. The vapordeposition mask according to claim 1, wherein a film thickness of theone is thinner than a film thickness of the other.
 3. The vapordeposition mask according to claim 1, wherein the second insulator islocated inside of the main opening part more centrally than the firstinsulator, the second opening part is located more inside than the firstopening part, and the second region located at an end of the secondopening part does not overlap with the first insulator and the maskbody.
 4. The vapor deposition mask according to claim 3, wherein thesecond region includes a step formed inside the main opening part by apart not overlapping with the first insulator and the mask body, a partcontacting a side surface of the first opening, and a part contacting anupper surface of the first insulator.
 5. The vapor deposition maskaccording to claim 1, wherein the first insulator is located inside ofthe main opening part more centrally than the second insulator, thefirst opening part is located more inside than the second opening part,and the first region located at an end of the first opening part doesnot overlap with the second insulator and the mask body.
 6. The vapordeposition mask according to claim 5, wherein the first region includesa part not overlapping with the second insulator and the mask body, anda step is formed inside the main opening part by the part and the secondregion.
 7. The vapor deposition mask according to claim 1, wherein themask body is made of an invar material.
 8. The vapor deposition maskaccording to claim 1, wherein the first insulator and the secondinsulator are made from an organic material.
 9. The vapor depositionmask according to claim 1, wherein the first insulator and the secondinsulator include silicon oxide or silicon nitride.
 10. An organic ELdisplay device comprising a light emitting layer formed using the vapordeposition mask according to claim
 1. 11. A vapor deposition maskcomprising: a mask body having a main opening part, a side surface ofthe main opening part, an upper surface intersecting with the sidesurface, and a lower surface intersecting with the side surface andopposing the upper surface; a first insulator contacting the lowersurface; a second insulator contacting the upper surface and the sidesurface; and a third insulator contacting the second insulator andopposing the upper surface and the side surface via the secondinsulator; wherein the first insulator includes a first region locatedinside of the main opening part, and a first opening part located in thefirst region, the second insulator includes a second region locatedinside of the main opening part, and a second opening part located inthe second region, the third insulator includes a third region locatedinside of the main opening part, and a third opening part located in thethird region, the mask body is sandwiched between the first insulatorand the second insulator, and the third insulator includes a regionlocated inside of the main opening part more centrally than the firstinsulator and the second insulator and not overlapping with the firstinsulator, the second insulator and the mask body.
 12. The vapordeposition mask according to claim 11, wherein a film thickness of thethird insulator is the thinnest among the film thickness of the firstinsulator, a film thickness of the second insulator and a film thicknessof the third insulator.
 13. The vapor deposition mask according to claim11, wherein the third opening part is located furthest inside among thefirst opening part, the second opening part and the third opening part.14. The vapor deposition mask according to claim 13, wherein the thirdregion includes a step formed inside the main opening part by a part notoverlapping with the first insulator, the second insulator and the maskbody, a part contacting a side surface of the first opening part and aside surface of the second opening part, and a part contacting an uppersurface of the second region.
 15. An organic EL display devicecomprising a light emitting layer formed using the vapor deposition maskaccording to claim 11.